PART |
Description |
Maker |
BAS70LT1 ON0123 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB) From old datasheet system 70VOLTS SCHOTTKY BARRIER DIODES CASE 318 08 STYLE 8 SOT 23 (TO 236AB)
|
Motorola, Inc MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor]
|
BAS40LT1 ON0121 BAS4 |
CASE 318-08, STYLE 8 SOT-23 TO-236AB SILICON, SIGNAL DIODE, TO-236AB CASE 318-08/ STYLE 8 SOT-23 TO-236AB From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
BT138F BT138F-500 BT138F-500F BT138F-500G BT138F-6 |
DIODE ZENER TRIPLE ISOLATED 200mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOT-363 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 18Vz 0.05mA-Izt 0.05 0.05uA-Ir 13.6 SOT-363 3K/REEL DIODE ZENER TRIPLE BI-DIRECTIONAL 200mW 24Vz 0.05mA-Izt 0.05 0.05uA-Ir 18.2 SOT-363 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 27Vz 0.05mA-Izt 0.05 0.05uA-Ir 20.4 SOT-363 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 22Vz 0.05mA-Izt 0.05 0.05uA-Ir 16.7 SOT-363 3K/REEL Octal Bus Transceivers with 3-State Outputs 20-LCCC -55 to 125 Triacs
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BAS4004LT1 |
CASE 318 08/ STYLE 12 SOT 23 (TO 236AB) CASE 318 08, STYLE 12 SOT 23 (TO 236AB)
|
Motorola, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
BC847CDW1T1 |
TRANSISTOR | BJT | PAIR | NPN | 45V V(BR)CEO | 100MA I(C) | SOT-363 晶体管|晶体管|一对|叩| 45V的五(巴西)总裁| 100mA的一(c)|的SOT - 363
|
Fujitsu, Ltd.
|
BAS16WT1 ON0115 |
CASE 419-02, STYLE 2 SC-70/SOT-323 From old datasheet system
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
2N7000 |
CASE 29-04, STYLE 22 TO-92 (TO-226AA) 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 CASE 29-04/ STYLE 22 TO-92 (TO-226AA)
|
Motorola Mobility Holdings, Inc. Motorola, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
|
MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
|
BC846AWT1 BC847AWT1 ON0161 BC848BWT1 BC848AWT1 BC8 |
General Purpose Transistors(NPN Silicon) 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR CASE 419-2, STYLE 3 SOT-23/SC-0 From old datasheet system
|
ONSEMI[ON Semiconductor]
|
CJ3134KDW |
SOT-363 Plastic-Encapsulate MOSFETS
|
TY Semiconductor Co., Ltd
|